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SiA811DJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.094 at V GS = - 4.5 V
0.131 at V GS = - 2.5 V
0.185 at V GS = - 1.8 V
I D (A) a
- 4.5
- 4.5
- 4.5
Q g
4.9 nC
? Halogen-free
? LITTLE FOOT ? Plus Schottky Power MOSFET
? New Thermally Enhanced PowerPAK ?
SC-70 Package
- Small Footprint Area
RoHS
COMPLIANT
- Low On-Resistance
SCHOTTKY PRODUCT SUMMARY
- Thin 0.75 mm profile
V KA (V)
20
V f (V)
Diode Forward Voltage
0.45 at 1 A
I F (A) a
2
APPLICATIONS
? Cellular Charger Switch
? Asynchronous DC/DC for Portable Devices
? Load Switch for Portable Devices
PowerPAK SC-70-6 Dual
S
K
6
K
K
A
1
2
NC
D
3
D
0.75 mm
Marking Code
HAX
Part # code
XXX
Lot Traceability
and Date code
G
G
5
2.05 mm
S
2.05 mm
D
A
4
Ordering Information: SiA811DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwis e noted
P-Channel MOSFET
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
T C = 25 °C
Symbol
V DS
V KA
V GS
Limit
- 20
20
±8
- 4.5 a
Unit
V
Continuous Drain Current (T J = 150 °C) (MOSFET)
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
- 4.5 a
- 3.6 b, c
- 2.9 b, c
Pulsed Drain Current (MOSFET)
I DM
-8
A
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
T C = 25 °C
T A = 25 °C
T C = 25 °C
T C = 70 °C
T A = 25 °C
I S
I F
I FM
- 4.5 a
- 1.6 b, c
2 b
5
6.5
5
1.9 b, c
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
T A = 70 °C
T C = 25 °C
T C = 70 °C
T A = 25 °C
T A = 70 °C
P D
T J , T stg
1.2 b, c
6.8
4.3
1.6 b, c
1.0 b, c
- 55 to 150
260
W
°C
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